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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJL21195/D
Silicon Power Transistors
The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. * * * * Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.50 A, 80 V, 1 Second
MJL21195* NPN MJL21196*
*Motorola Preferred Device
PNP
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
CASE 340G-02 TO-3PBL
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current -- Continuous Collector Current -- Peak (1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 200 1.43 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5.0 s, Duty Cycle 10%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typical
Max
Unit
VCEO(sus) ICEO
250 --
-- --
-- 100
Vdc Adc (continued)
(c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data
1
MJL21195 MJL21196
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2% THD hFE unmatched hFE matched fT Cob -- -- 4 -- 0.8 0.08 -- -- -- -- -- 500 MHz pF % hFE 25 8 VBE(on) VCE(sat) -- -- -- -- 1.4 4 -- -- -- -- 100 -- 2.2 Vdc Vdc IS/b 4.0 2.25 -- -- -- -- Adc IEBO ICEX -- -- -- -- 100 100 Adc Adc Symbol Min Typical Max Unit
PNP MJL21195
F T, CURRENT BANDWIDTH PRODUCT (MHz) F T, CURRENT BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 TJ = 25C ftest = 1 MHz VCE = 5 V VCE = 10 V 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.1
NPN MJL21196
VCE = 10 V
VCE = 5 V
TJ = 25C ftest = 1 MHz
1.0 IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
2
Motorola Bipolar Power Transistor Device Data
MJL21195 MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
1000 1000
NPN MJL21196
h FE , DC CURRENT GAIN
TJ = 100C 100 25C - 25C VCE = 20 V 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
h FE , DC CURRENT GAIN
100
TJ = 100C 25C - 25C VCE = 20 V
10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJL21195
1000 1000
NPN MJL21196
h FE , DC CURRENT GAIN
100
TJ = 100C 25C - 25C VCE = 5 V
h FE , DC CURRENT GAIN
100
TJ = 100C 25C - 25C VCE = 5 V
10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP MJL21195
30 2.0 A IC , COLLECTOR CURRENT (A) 1.5 A 1.0 A IB = 0.5 A IC , COLLECTOR CURRENT (A) 25 20 15 10 5.0 TJ = 25C 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 0 30 25 20
NPN MJL21196
2.0 A 1.5 A 1.0 A IB = 0.5 A 15 10 5.0 TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
Motorola Bipolar Power Transistor Device Data
3
MJL21195 MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
3.0 1.4 SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 VCE(sat) 0 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VBE(sat) SATURATION VOLTAGE (VOLTS) TJ = 25C IC/IB = 10 1.2 1.0 0.8 0.6 0.4 VCE(sat) 0.2 TJ = 25C IC/IB = 10 VBE(sat)
NPN MJL21196
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21195
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C 10 TJ = 25C
NPN MJL21196
1.0
1.0
VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS)
VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base-Emitter Voltage
Figure 12. Typical Base-Emitter Voltage
100 IC , COLLECTOR CURRENT (AMPS)
10 ms 10 1 Sec 50 ms 1.0 250 ms TJ = 25C 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
Figure 13. Active Region Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
MJL21195 MJL21196
10000 Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 Cib
1000 Cob TJ = 25C ftest = 1 MHz 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS)
1000
TJ = 25C ftest = 1 MHz 100 0.1 1.0
Cob
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJL21195 Typical Capacitance
Figure 15. MJL21196 Typical Capacitance
1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000
Figure 16. Typical Total Harmonic Distortion
+50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER 50 DUT 0.5
SOURCE AMPLIFIER
0.5
8.0
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
Motorola Bipolar Power Transistor Device Data
5
MJL21195 MJL21196
PACKAGE DIMENSIONS
0.25 (0.010) -B- -Q-
M
TB
M
-T- C
U N A R -Y- P K
1 2 3
E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125
L
F 2 PL G
W D 3 PL 0.25 (0.010)
M
J H YQ
S
DIM A B C D E F G H J K L N P Q R U W
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 340G-02 TO-3PBL ISSUE F
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
6
Motorola Bipolar Power Transistor Device Data MJL21195/D


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